微机电器件设计、制造及计算机辅助设计/京航空航天“研究生英文教材”系列丛书 企业批量购书 分享 关注商品举报 微机电器件设计、制造及计算机辅助设计
定 价:65 元
丛书名:京航空航天“研究生英文教材”系列丛书
- 作者:郭占社 著
- 出版时间:2016/6/1
- ISBN:9787512421097
- 出 版 社:北京航空航天大学出版社
- 中图法分类:TN4
- 页码:
- 纸张:胶版纸
- 版次:1
- 开本:16K
- 字数:(单位:千字)
Thisbookfirstlyintroducesthepertinentfundamentaltheory,importantmaterialandfabricationprocessofmicroGelectromechanicalsystems.Basedonthesetheories,thedesignruleandimportantengineeringexamplesaredescribedindetail.Then,manyengineeringapplicationsforMEMSincludingtheaccelerationmeasurement,theangularspeedmeasurementandthepressuremeasurementareintroduced.Finally,finiteelementmethodisintroducedinordertoprovethecorrectnessofthedesign.Thisengineeringapplicationofsimulationincludesthestaticandmodalanalysisofthebeam,capacitanceanalysis,thermalGstructureanalysisofthedeviceandfatigueanalysisetc.Itcanbeselectedasthereferencetothepostgraduates,undergraduatesandpertinentengineeringstaffwhoseresearch directionsareinstrumentationscienceandtechnology,controlscienceandengineering,mechanicalengineeringetc.
Chapter1 Introduction ………………………………………………………………………… 1
1.1 ConceptofMEMS ……………………………………………………………………… 1
1.2 DevelopmentofMEMS ………………………………………………………………… 4
1.3 MEMSCAD …………………………………………………………………………… 9
Chapter2 BasictheoryofMEMS …………………………………………………………… 12
2.1 TheoryofelectrostaticMEMScombactuators …………………………………… 12
2.1.1 Introduction ……………………………………………………………………… 12
2.1.2 Operatingprinciples …………………………………………………………… 13
2.1.3 Platecapacitortheoryinidealcondition ……………………………………… 14
2.1.4 ThemodifiedmodelofMEMSplatecapaciator ……………………………… 17
2.1.5 Calculationofelectrostaticcombdrivingforceinidealsituation …………… 24
2.1.6 Weakcapacitancedetectionmethodofelectrostaticcombdrive …………… 26
2.2 RelevanttheoreticalcalculationsfortheMEMScantileverbeam ………………… 34
2.2.1 Introduction ……………………………………………………………………… 34
2.2.2 Theoreticalcalculationmethodforcantileverbeam ………………………… 35
2.2.3 RelevanttheoreticalcalculationofaxialtensileandcompressiveonsingleGend
clampedbeams ………………………………………………………………… 36
2.2.4 RelatedtheoreticalcalculationsofdoubleGendclampedbeamsaxialtension
andcompression ………………………………………………………………… 40
2.3 MembranetheoryofMEMS ………………………………………………………… 47
2.3.1 Theoryofclampedaroundcirculardiaphragm ………………………………… 48
2.3.2 Theoryofclampedaroundrectangularflatdiaphragm ……………………… 49
References …………………………………………………………………………………… 52
Chapter3 MEMSmaterials …………………………………………………………………… 53
3.1 Monocrystallinesilicon ……………………………………………………………… 53
3.1.1 Introduction ……………………………………………………………………… 53
3.1.2 Crystalorientationofmonocrystallinesilicon ………………………………… 55
3.2 Polycrystallinesilicon ………………………………………………………………… 64
3.3 Silica …………………………………………………………………………………… 66
3.4 Piezoelectricmaterials ………………………………………………………………… 67
3.4.1 Piezoelectriceffectandinversepiezoelectriceffectofmaterials …………… 67
3.4.2 Quartzcrystal …………………………………………………………………… 68
3.4.3 Piezoelectricceramics …………………………………………………………… 73
3.5 OtherMEMSmaterials ……………………………………………………………… 75
3.6 Summary ……………………………………………………………………………… 76
Chapter4 MEMStechnology ………………………………………………………………… 77
4.1 MEMSlithographyprocess ………………………………………………………… 78
4.2 KeytechnologyofMEMSlithographyprocess …………………………………… 80
4.2.1 Wafercleaning …………………………………………………………………… 80
4.2.2 Siliconoxidation ………………………………………………………………… 80
4.2.3 Spincoatingprocess …………………………………………………………… 87
4.2.4 Prebaking ………………………………………………………………………… 90
4.2.5 Exposure ………………………………………………………………………… 92
4.2.6 Development ……………………………………………………………………… 94
4.2.7 Hardening ………………………………………………………………………… 96
4.2.8 FabricationoftheSiO2 window ………………………………………………… 97
4.3 SubsequentprocessofMEMS ……………………………………………………… 98
4.3.1 Bulksilicontechnology ………………………………………………………… 98
4.3.2 Surfacesiliconprocess ………………………………………………………… 103
4.3.3 LIGAtechnology ……………………………………………………………… 104
4.3.4 Sputteringtechnology ………………………………………………………… 105
4.3.5 LiftGoffprocess ………………………………………………………………… 107
4.4 Filmpreparationtechnology………………………………………………………… 107
4.5 Bondingprocess ……………………………………………………………………… 108
4.5.1 Anodicbondingprocess………………………………………………………… 109
4.5.2 SiliconGsilicondirectbonding ………………………………………………… 110
4.5.3 Metaleutecticbonding ………………………………………………………… 113
4.5.4 Coldpressureweldingbonding ……………………………………………… 114
4.6 Engineeringexamplesofcombinationformultipleprocessestofabricatethe
MEMSdevice ………………………………………………………………………… 115
4.6.1 Introduction …………………………………………………………………… 115
4.6.2 EngineeringexampleoffabricationprocessforresonantMEMSgyroscope
…………………………………………………………………………………… 115
4.6.3 EngineeringexampleofelectromagneticmicroGmotorproductionprocess
…………………………………………………………………………………… 118
4.7 Summary ……………………………………………………………………………… 124
References…………………………………………………………………………………… 125
Chapter5 Frictionwearandtearundermicroscale ……………………………………… 126
5.1 OffGchiptestingmethodformicrofriction ………………………………………… 127
5.1.1 MicroGtribologytestwiththepinGonGdiscmeasuringmethod ……………… 127
5.1.2 MicroGtribologytestwithAFM ……………………………………………… 128
5.1.3 MicroGtribologytestwithspecialmeasuringdevice ………………………… 130
5.2 OnGchiptestingmethodformicrofriction ………………………………………… 132
5.2.1 OnGchiptestingmethodactuatedbyelectrostaticforce …………………… 132
5.2.2 OnGchipmicroGfrictiontestingmethodusingthemechanismcharactersof
thebimorphmaterial…………………………………………………………… 139
5.3 ExampleofthedesignforanonGchipmicroGfrictionstructure ………………… 141
5.3.1 Structureandworkingprinciple ……………………………………………… 141
5.3.2 Calculationofpertinenttheory ……………………………………………… 142
5.3.3 Technologicalanalysisofstructuraldesign ………………………………… 148
5.3.4 Testingresultsanddataanalysis……………………………………………… 152
5.3.5 ResearchandtestofwearproblemofMEMSdevices ……………………… 161
5.4 Summary ……………………………………………………………………………… 165
References…………………………………………………………………………………… 165
Chapter6 MEMStestingtechnologyandengineeringapplication ………………………… 169
6.1 Accelerationmeasurementandcorrespondingsensors …………………………… 169
6.1.1 Workingprincipleoftheaccelerationsensorandtheclassification ……… 170
6.1.2 Capacitivesiliconmicromechanicalaccelerometer …………………………… 172
6.1.3 Piezoresistivesiliconmicromechanicalaccelerometer ……………………… 173
6.1.4 Piezoelectricmicromechanicalaccelerometer ………………………………… 174
6.1.5 ResonantsiliconMEMSaccelerometer ……………………………………… 175
6.2 Angularspeedmeasurementandcorrespondingsensors ………………………… 177
6.2.1 Workingprinciple ……………………………………………………………… 177
6.2.2 DevelopmentofMEMSgyroscope …………………………………………… 178
6.2.3 Classificationofmicromechanicalgyroscope ………………………………… 188
6.3 Pressuremeasurementandcorrespondingsensors ……………………………… 190
6.3.1 Workingpincinple ……………………………………………………………… 190
6.3.2 Resonantsiliconmicromechanicalpressuresensoranditsdevelopment … 193
6.4 MeasurementofmicroGtorque ……………………………………………………… 198
6.4.1 Introduction …………………………………………………………………… 198
6.4.2 Workingprincipleofnoncontactmethod …………………………………… 199
6.4.3 Theoreticalcalculation ………………………………………………………… 200
6.4.4 Correspondingequipmenttorealizethenoncontactmethod ……………… 205
6.4.5 Experimentresultanddiscussion …………………………………………… 209
6.5 Microscopicmorphologytestingmethod ………………………………………… 211
6.6 Summary ……………………………………………………………………………… 212
References…………………………………………………………………………………… 212
Chapter7 Applicationexamplesofthefiniteelementmethodinthedesignof
MEMSdevices …………………………………………………………………… 218
7.1 Importantconceptsofthesoftware………………………………………………… 218
7.2 IntroductionoftheAnsyssoftwareinterface……………………………………… 220
7.3 ThecoordinatesysteminAnsys …………………………………………………… 221
7.4 Engineeringexamples ……………………………………………………………… 226
7.4.1 StaticanalysisofsingleGclampedbeam ……………………………………… 226
7.4.2 ModalanalysisofdoubleGclampedbeam ……………………………………… 245
7.4.3 CapacitanceanalysisofMEMSelectrostaticcombfingersdrive …………… 257
7.4.4 Fatiguestrengthcalculationexample ………………………………………… 264
7.5 Summary ……………………………………………………………………………… 272